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Solid State Communications

Volumn 151, Issue 19, 2011, Pages 1388-1393

Thermoelectric properties and electronic structure of Te-doped CoSb 3 compounds

(4) Zhu, Yunguang a Shen, Honglie a Zuo, Lianyong a Guan, Hao a

a NANJING UNIVERSITY OF AERONAUTICS AND ASTRONAUTICS (China)

Author keywords

A. Semiconductors; C. Electronic structure; D. Thermoelectric properties

Indexed keywords

A. SEMICONDUCTORS; C. ELECTRONIC STRUCTURE; COLD ISOSTATIC PRESSING; DEGENERATED SEMICONDUCTORS; DENSITY OF STATE; ELECTRICAL RESISTIVITY; FIRST-PRINCIPLES; MAXIMUM VALUES; PLANE-WAVE PSEUDO-POTENTIAL; POWER FACTORS; SOLUTION LIMITS; TE DOPING; THERMOELECTRIC PROPERTIES;

ANTIMONY COMPOUNDS; COBALT COMPOUNDS; CONDUCTION BANDS; DENSITY FUNCTIONAL THEORY; ELECTRIC CONDUCTIVITY; ELECTRIC POWER FACTOR; ELECTRON MOBILITY; ELECTRONIC PROPERTIES; ELECTRONIC STRUCTURE; FERMI SURFACE; MECHANICAL ALLOYING; MECHANICAL PROPERTIES; SEMICONDUCTOR DOPING; SINTERING; THERMOELECTRIC EQUIPMENT; THERMOELECTRICITY;

SEMICONDUCTING TELLURIUM;

EID: 80051786776 PISSN: 00381098 EISSN: None Source Type: Journal
DOI: 10.1016/j.ssc.2011.06.008 Document Type: Article

Times cited : (18)

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