Highly efficient and bright LEDs overgrown on GaN nanopillar substrates

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 17, Issue 4, 2011, Pages 971-978

  Chiu, Ching Hsueh ^a   Tu, Po Min ^a   Lin, Chien Chung ^a   Lin, Da Wei ^a   Li, Zhen Yu ^a   Chuang, Kai Lin ^a   Chang, Jet Rung ^a   Lu, Tien Chang ^a   Zan, Hsiao Wen ^a   Chen, Chiang Yao ^b   Kuo, Hao Chung ^a   Wang, Shing Chung ^a   Chang, Chun Yen ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b Ulvac Taiwan Inc   (Taiwan)

Author keywords

Light emitting diodes (LEDs); metal organic chemical vapor deposition (MOCVD); molecular beam epitaxy (MBE); quantum confined Stark effect (QCSE)

Indexed keywords

AIR VOIDS; BLUE SHIFT; CROSS-SECTIONAL SCANNING ELECTRON MICROSCOPIES; EPITAXIAL LATERAL OVERGROWTH; GAN LAYERS; INGAN/GAN QUANTUM WELL; LIGHT OUTPUT; LIGHT-EXTRACTION EFFICIENCY; MOLECULAR BEAM EPITAXY (MBE); NANO SCALE; NANOPILLAR; NANOPILLARS; PEAK WAVELENGTH; QUANTUM-CONFINED STARK EFFECT; RAMAN SPECTRUM; RF PLASMA; SAPPHIRE SUBSTRATES; THREADING DISLOCATION DENSITIES; TRANSMISSION ELECTRON MICROSCOPY IMAGES;

CHEMICAL BEAM EPITAXY; EPITAXIAL GROWTH; EXTRACTION; GALLIUM ALLOYS; INDUSTRIAL CHEMICALS; LIGHT EMISSION; LIGHT TRANSMISSION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; NANOSTRUCTURED MATERIALS; NANOTECHNOLOGY; NANOWIRES; ORGANIC CHEMICALS; ORGANIC LIGHT EMITTING DIODES (OLED); PLASMA DEPOSITION; RAMAN SPECTROSCOPY; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR QUANTUM WELLS; STARK EFFECT; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY;

GALLIUM NITRIDE;

EID: 80051704882     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSTQE.2010.2065794     Document Type: Article

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