Magnetoelectric sensors with directly integrated charge sensitive readout circuit-improved field sensitivity and signal-to-noise ratio

IEEE Sensors Journal

Volumn 11, Issue 10, 2011, Pages 2260-2265

  Fang, Zhao ^a   Mokhariwale, Ninad ^a   Li, Feng ^a   Datta, Suman ^a   Zhang, Q M ^a  

^a The Center for Nanotechnology Education and Utilization   (United States)

Author keywords

Flux concentration; magnetoelectric effect; Metglas PVDF; multilayer; signal to noise ratio (SNR)

Indexed keywords

FIELD SENSITIVITY; FLUX CONCENTRATION; HIGH SNR; INTEGRATED CHARGE; LOW FREQUENCY; LOW NOISE; MAGNETOELECTRIC SENSORS; MAGNETOSTRICTIVE COEFFICIENTS; ME COEFFICIENT; ME COMPOSITES; METGLAS/PVDF; MODEL SYSTEM; PIEZOELECTRIC LAYERS; PIEZOELECTRIC SINGLE CRYSTALS; READ-OUT CIRCUIT; ROOM TEMPERATURE; SIGNAL TO NOISE; ULTRA-HIGH; ULTRASENSITIVE;

COMPOSITE MICROMECHANICS; DIFFRACTIVE OPTICS; MAGNETIC LAMINATES; MAGNETIC SENSORS; MAGNETOELECTRIC EFFECTS; MAGNETOSTRICTIVE DEVICES; PIEZOELECTRICITY; READOUT SYSTEMS; SINGLE CRYSTALS;

SIGNAL TO NOISE RATIO;

EID: 80051701681     PISSN: 1530437X     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSEN.2011.2113333     Document Type: Article

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