GaAs and InAs nanowires for ballistic transport

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 17, Issue 4, 2011, Pages 922-934

  Shtrikman, Hadas ^a   Popovitz Biro, Ronit ^a   Kretinin, Andrey V ^a   Kacman, Perla ^b  

^a WEIZMANN INSTITUTE OF SCIENCE   (Israel)

^b INSTITUTE OF PHYSICS   (Poland)

Author keywords

Core shell heterostructure nanowires (NWs); GaAs InAs NWs; gold assisted vapor liquid solid (VLS) growth; molecular beam epitaxy (MBE); stacking faults (SFs); wurtzite (WZ); zinc blende (ZB)

Indexed keywords

GAAS-INAS NWS; MOLECULAR BEAM EPITAXY (MBE); VAPOR-LIQUID-SOLID GROWTH; WURTZITES; ZINC BLENDE (ZB);

BALLISTICS; GALLIUM ALLOYS; GALLIUM ARSENIDE; HETEROJUNCTIONS; LIQUIDS; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; NANOWIRES; PASSIVATION; SEMICONDUCTING GALLIUM; SEMICONDUCTING INDIUM; STACKING FAULTS; TRANSPORT PROPERTIES; VAPORS; ZINC; ZINC SULFIDE;

INDIUM ARSENIDE;

EID: 80051676851     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSTQE.2010.2053920     Document Type: Review

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