Dielectric tunability and microwave properties of Ba0.5Sr 0.5TiO3-BaMg6Ti6O19 composite ceramics for tunable microwave device applications

Journal of Electroceramics

Volumn 26, Issue 1-4, 2011, Pages 185-190

  Chou, Xiujian ^a   Wang, Jing ^a   Zhao, Zhenyu ^a   Geng, Wenping ^a   Zhang, Wendong ^a   Zhai, Jiwei ^b  

^a NORTH UNIVERSITY OF CHINA   (China)

^b TONGJI UNIVERSITY   (China)

Author keywords

Ba 0.5Sr0.5TiO3; BaMg6Ti6O19; Composites; Dielectric properties; Ferroelectricity; Microstructure; Tunability

Indexed keywords

BAMG6TI6O19; COMPOSITE CERAMIC; COMPOSITE MATERIAL SYSTEM; DIELECTRIC TUNABILITY; HIGH TUNABILITY; LOW DIELECTRIC CONSTANTS; MICROWAVE BANDS; MICROWAVE DIELECTRIC PROPERTIES; MICROWAVE PROPERTY; Q-VALUES; SOLID STATE REACTION METHOD; TIO; TUNABILITIES; TUNABLE MICROWAVE DEVICES;

BARIUM; BARIUM COMPOUNDS; DIELECTRIC LOSSES; ELECTRIC FIELDS; FERROELECTRICITY; MICROSTRUCTURE; MICROWAVE DEVICES; MICROWAVES;

CERAMIC MATERIALS;

EID: 80051669438     PISSN: 13853449     EISSN: 15738663     Source Type: Journal    
DOI: 10.1007/s10832-011-9643-x     Document Type: Article

References (19)

1. A.K. Tagantsev, V.O. Sherman, K.F. Astafiev, J. Venkatesh, N. Setter, J. Electroceram. 11, 5 (2003)
2. V.O. Sherman, A.K. Tagantsev, N. Setter, D. Iddles, T. Price, J. Appl. Phys. 99, 074104 (2006)
3. X.G. Tang, K.H. Chew, H.L.W. Chan, Acta Mater. 52, 5177 (2004)
4. H. Jiang, J.W. Zhai, X. Yao, J. Phys. D Appl. Phys. 42, 225404 (2009)
5. W. Chang, J.S. Horwitz, A.C. Cater, J.M. Pond, S.W. Kirchoefer, C.M. Gilmore, D.B. Chrisey, Appl. Phys. Lett. 74, 1033 (1999)
6. E.A. Nenasheva, A.D. Kanareykin, N.F. Kartenko, A.I. Dedyk, S. F. Karmanenko, J. Electroceram. 13, 235 (2004)
7. D.Y. Lu, M. Toda, M. Sugano, J. Am. Ceram. Soc. 89, 3112 (2006)
8. J.J. Zhang, J.W. Zhai, H.T. Jiang, X. Yao, Ferroelectrics 388, 74 (2009)
9. H.I. Hsiang, G.P. Lai, Mater. Sci. Eng. BB123, 69 (2005)
10. B.W. Hakki, P.D. Coleman, IEEE Trans.Microwave Theory Tech. 8, 402 (1960)
11. S.F. Wang, J.P. Chu, C.C. Lin, T. Mahalingam, J. Appl. Phys. 98, 014107 (2005)
12. K.H. Yoon, J.C. Lee, J. Park, D.H. Kang, C.M. Song, Y.G. Seo, J. Appl. Phys. Part 1(40), 5497 (2001)
13. Y. Chen, X.L. Dong, R. Hong, J. Tong, Y.L.Wang, J. Appl. Phys. 98, 064107 (2005)
14. L.C. Sengupta, S. Sengupta, IEEE Trans. Ultrason. Ferroelectr. Freq. Control 44, 792 (1997)
15. B. Su, T.W. Button, J. Appl. Phys. 95, 1382 (2004)
16. L.C. Sengupta, S. Sengupta, Mater. Res. Innovations 2, 278 (1999)
17. L. Sengupta, U.S. Patent No. 5,635,434 ,3 June 1997
18. W. Chang, L. Sengupta, J. Appl. Phys. 92, 3941 (2002)
19. S.W. Wang, J.W. Zhai, X.J. Chou, L.L. Zhang, X. Yao, Mater. Chem. Phys. 115, 200 (2009)