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Journal of Electronic Materials

Volumn 40, Issue 8, 2011, Pages 1781-1784

HgCdTe quantum detection: From long-wave IR down to UV

(2) Gravrand, O a Rothman, J a

a CEA LETI (France)

Author keywords

HgCdTe; impact ionization; IR; photodiode; spectral response; UV

Indexed keywords

AVALANCHE GAINS; CDZNTE SUBSTRATE; CUT-OFF; EXCESS NOISE FACTOR; FLIP CHIP; FOCAL PLANES; HGCDTE; HGCDTE PHOTODIODES; MONOLITHIC DETECTORS; QUANTUM DETECTION; SHORT WAVE INFRARED; SHORT-WAVELENGTH; SPECTRAL RESPONSE; SUBSTRATE THINNING; ULTRA-VIOLET; UV; VISIBLE RANGE; WAVELENGTH RANGES;

BANDWIDTH; CADMIUM COMPOUNDS; DETECTORS; IMPACT IONIZATION; MERCURY COMPOUNDS; PHOTODIODES; WAVES;

QUANTUM EFFICIENCY;

EID: 80051594508 PISSN: 03615235 EISSN: None Source Type: Journal
DOI: 10.1007/s11664-011-1691-0 Document Type: Conference Paper

Times cited : (14)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.