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Volumn 40, Issue 8, 2011, Pages 1668-1673

Low-pressure chemical vapor deposition of CdS and atomic layer deposition of CdTe films for HgCdTe surface passivation

Author keywords

atomic layer deposition; CdS; CdTe; HgCdTe; Surface passivation

Indexed keywords

ADVANCED DETECTOR; CDS; CDTE; COMPLEX STRUCTURE; CONFORMAL COVERAGE; FOCAL PLANES; HGCDTE; MINORITY CARRIER LIFETIMES; PLANAR DETECTORS; SURFACE PASSIVATION;

EID: 80051591212     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-011-1640-y     Document Type: Conference Paper
Times cited : (12)

References (7)
  • 4
    • 0031550020 scopus 로고    scopus 로고
    • 10.1016/S0022-0248(97)00367-9 1:CAS:528:DyaK2sXnvF2rs78%3D
    • J Ni JJ BelBruno 1997 J. Cryst. Growth 182 321 10.1016/S0022-0248(97) 00367-9 1:CAS:528:DyaK2sXnvF2rs78%3D
    • (1997) J. Cryst. Growth , vol.182 , pp. 321
    • Ni, J.1    Belbruno, J.J.2
  • 5
    • 0026946882 scopus 로고
    • Atomic layer epitaxy of CdTe on GaAs, by organometallic vapor phase epitaxy
    • DOI 10.1016/0022-0248(92)90534-P
    • WS Wang HE Ehsani IB Bhat 1992 J. Cryst. Growth 124 670 10.1016/0022-0248(92)90534-P 1:CAS:528:DyaK3sXntVCgsQ%3D%3D (Pubitemid 23600900)
    • (1992) Journal of Crystal Growth , vol.124 , Issue.1-4 , pp. 670-675
    • Wang, W.S.1    Ehsani, H.E.2    Bhat, I.B.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.