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Volumn 330, Issue 1, 2011, Pages 5-8

Growth and properties of the single AgCd2GaSe4 crystals

(7) Bozhko, V V a Bulatetska, L V a Davydyuk, G Ye a Parasyuk, O V a Tretyak, A P a Vainorius, N b Kazukauskas V b

a LESYA UKRAINKA EASTERN EUROPEAN NATIONAL UNIVERSITY (Ukraine)

Author keywords

A1. Conductivity; A1. Crystal structure; A1. Directional solidification; A1. Light absorption; B1. Inorganic compounds; B2. Semiconducting quarternary compounds

Indexed keywords

A1. CONDUCTIVITY; A1. CRYSTAL STRUCTURE; A1. LIGHT ABSORPTION; B1. INORGANIC COMPOUNDS; SEMICONDUCTING QUARTERNARY COMPOUNDS;

ABSORPTION; ACTIVATION ENERGY; CRYSTAL IMPURITIES; CRYSTAL STRUCTURE; DEFECTS; DIFFRACTIVE OPTICS; ELECTRIC CONDUCTIVITY; ENERGY GAP; INORGANIC COMPOUNDS; POINT DEFECTS;

SINGLE CRYSTALS;

EID: 80051551128 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/j.jcrysgro.2011.06.055 Document Type: Article

Times cited : (7)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.