Investigation of chemical bath deposition of CdO thin films using three different complexing agents

Applied Surface Science

Volumn 257, Issue 22, 2011, Pages 9237-9242

  Khallaf, Hani ^a   Chen, Chia Ta ^b   Chang, Liann Be ^b   Lupan, Oleg ^a,c   Dutta, Aniruddha ^a   Heinrich, Helge ^a   Shenouda, A ^d   Chow, Lee ^a  

^a UNIVERSITY OF CENTRAL FLORIDA   (United States)

^b CHANG GUNG UNIVERSITY   (Taiwan)

^c TECHNICAL UNIVERSITY OF MOLDOVA   (Moldova)

^d CENTRAL METALLURGICAL RESEARCH AND DEVELOPMENT INSTITUTE CMRDI   (Egypt)

Author keywords

CdO; Chemical bath deposition; Group II VI Semiconductors; Thin films

Indexed keywords

ANNEALING; CADMIUM COMPOUNDS; DEPOSITION; ENERGY GAP; II-VI SEMICONDUCTORS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; X RAY DIFFRACTION;

ANNEALED FILMS; AS-GROWN FILMS; CDO THIN FILMS; CHEMICAL-BATH DEPOSITION; COMPLEXING AGENTS; OXYGEN RATIOS;

THIN FILMS;

EID: 80051549100     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2011.04.060     Document Type: Article

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