50 nm thick AlN film-based piezoelectric cantilevers for gravimetric detection

Journal of Micromechanics and Microengineering

Volumn 21, Issue 8, 2011, Pages

  Ivaldi, P ^a   Abergel, J ^a   Matheny, M H ^b   Villanueva, L G ^b   Karabalin, R B ^b   Roukes, M L ^b   Andreucci, P ^a   Hentz, S ^a,b   Defay E ^a  

^a CEA LETI   (France)

^b CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALLAN DEVIATION; ALN; ALN LAYERS; ANALYTICAL PREDICTIONS; CANTILEVER STRUCTURES; CMOS PROCESSING; DESIGN RULES; FABRICATED DEVICE; GAS DETECTION; HIGH RESOLUTION; INTEGRABILITY; LIMIT OF DETECTION; LOW NOISE OPERATION; LOW-POWER OPERATION; MATERIAL CHARACTERIZATIONS; MICRO-CANTILEVERS; PERFORMANCE OPTIMIZATIONS; PIEZOELECTRIC CANTILEVERS; RESONANT GAS;

COMPOSITE MICROMECHANICS; FREQUENCY RESPONSE; GAS DETECTORS; NANOCANTILEVERS; NITRIDES; PIEZOELECTRICITY;

ALUMINUM NITRIDE;

EID: 80051542292     PISSN: 09601317     EISSN: 13616439     Source Type: Journal    
DOI: 10.1088/0960-1317/21/8/085023     Document Type: Article

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