Nanolithography in microelectronics: A review

Technical Physics

Volumn 56, Issue 8, 2011, Pages 1061-1073

  Seisyan, R P ^a  

^a IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 79961140569     PISSN: 10637842     EISSN: None     Source Type: Journal    
DOI: 10.1134/S1063784211080214     Document Type: Review

References (26)

1. R. P. Seisyan, in Proceedings of the Japan-Russia Advanced Science and Technology Forum, Tokyo, 2000, pp. 164-172.
2. R. P. Seisyan, in Proceedings of the International Forum on Nanotechnologies (Rusnanotech'08), Moscow, 2008, p. 278.
3. S. Wolf, Microchip Manufacturing (Lattice, Sunstet Beach, 2004).
4. G. N. Berezin, A. V. Nikitin, and R. A. Sirus, Optical Backgrounds of Contact Photolithography (Radio i Svyaz', Moscow, 1982) [in Russian].
5. R. P. Seisyan, Applied Physics: Microelectronics (SPb-GPU, St. Petersburg, 2002), Chap. 2 [in Russian].
6. R. P. Seisyan, Zh. Tekh. Fiz. 75(5), 1 (2005) [Tech. Phys. 50, 535 (2005)].
7. Principles of Lithography, Ed. by H. J. Levinson (SPIE, Washington, 2001).
8. http://www. ASML. com.
9. M. A. Gan and R. P. Seisyan, in Proceedings of the International Forum on Nanotechnologies (Rusnanotech'08), Moscow, 2008, p. 48.
10. A. B. Bel'skii, M. A. Gann, I. A. Mironov, and R. P. Seisyan, Opt. Zh. 76 (8), 59 (2009).
11. J. T. Wallmark, in Microelectronics, Ed. by E. Keonjan (McGraw-Uill, New York, 1963), pp. 10-96.
12. R. P. Seisyan, in Proceedings of the 14th International Conference on Laser Optics (LO-2010), St. Petersburg, 2010, p. 25.
13. M. D. Levenson, N. S. Viswanathan, and R. A. Simpson, IEEE Trans. Electron Devices 29, 1628 (1982).
14. B. W. Smith, et al., Proc. SPIE 5377 (2004).
15. R. F. Pease and S. Y. Chou, Proc. IEEE 96, 248 (2008); D. Yost, T. Forte, M. Fritze, D. Astolfi, V. Suntharalingam, C. K. Chen, and S. Cann, J. Vac. Sci. Technol. B 20, 191 (2002).
16. T. Hirayama, et al., in Proceedings of the International Symposium on Extreme Ultraviolet Lithography (EUV SEMATECH), Tahoe, 2008.
17. M. Shirai, et al., in Proceedings of the International Symposium on Extreme Ultraviolet Lithography (EUV SEMATECH), Sapporo, 2007.
18. N. A. Kaliteevskaya, S. I. Nesterov, V. A. Gorelov, and R. P. Seisyan, in Proceedings of the International Forum on Nanotechnologies (Rusnanotech'08), Moscow, 2008, p. 249.
19. E. G. Barash, A. Yu. Kabin, V. M. Lyubin, and R. P. Seisyan, Zh. Tekh. Fiz. 62 (3), 106 (1992) [Sov. Phys. Tech. Phys. 37, 292 (1992)].
20. D. Yost, T. Forte, M. Fritze, D. Astolfi, V. Suntharalingam, C. K. Chen, and S. Cann, J. Vac. Sci. Technol. B 20, 191 (2002).
21. M. Fritze, et al., Lincoln Lab. J. 14, 237 (2003).
22. M. Lercel, Future Fab. Int., 28, 152 (2009).
23. S. V. Gaponov, in Proceedings of the Symposium "Nanophysics and Nanoelectronics," Nizhni Novgorod, 2005; N. I. Ukhalo and N. N. Salashchenko, Vestn. Ross. Akad. Nauk 78 (5) (2008).
24. N. I. Ukhalo and N. N. Salashchenko, Vestn. Ross. Akad. Nauk 78 (5) (2008).
25. T. Kuhlmann, S. Yulin, T. Feigl, et al., Appl. Opt. 41, 2048 (2002).
26. P. A. Belov, K. R. Simovskii, and Ya. Khao, in Problems of Coherent and Nonlinear Optics (SPbGUITMO, St. Petersburg, 2006) pp. 37-53.