Dynamically stabilized growth of polar oxides: The case of MgO(111)

Physical Review Letters

Volumn 107, Issue 5, 2011, Pages

  Lazarov, Vlado K ^a   Cai, Zhuhua ^b   Yoshida, Kenta ^a   Zhang, K Honglian L ^c   Weinert, M ^d   Ziemer, Katherine S ^b   Hasnip, Philip J ^a  

^a UNIVERSITY OF YORK   (United Kingdom)

^b NORTHEASTERN UNIVERSITY   (United States)

^c UNIVERSITY OF OXFORD   (United Kingdom)

^d UNIVERSITY OF WISCONSIN MILWAUKEE   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

FIRST-PRINCIPLES CALCULATION; GROWTH PROCESS; MODEL SYSTEM; POLAR OXIDES; SURFACE REGION; THEORETICAL PREDICTION;

CALCULATIONS; CRYSTAL GROWTH; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; OXIDE FILMS; SILICON CARBIDE; SINGLE CRYSTALS; SURFACE ACTIVE AGENTS;

FILM GROWTH;

EID: 79961110320     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.107.056101     Document Type: Article

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