Non-invasive nano-imaging of ion implanted and activated copper in silicon

Journal of Applied Physics

Volumn 110, Issue 2, 2011, Pages

  Ballout, Fouad ^a   Samson, Jean Sébastien ^a,c   Schmidt, Diedrich A ^a   Bründermann, Erik ^a   Mathis, Yves Laurent ^b   Gasharova, Biliana ^b   Dirk Wieck, Andreas ^a   Havenith, Martina ^a  

^a RUHR UNIVERSITY BOCHUM   (Germany)

^b KARLSRUHE INSTITUTE OF TECHNOLOGY   (Germany)

^c MAX PLANCK INSTITUTE FOR INTELLIGENT SYSTEMS   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CHANNELING EFFECT; COPPER IONS; FREE CARRIERS; FTIR; FTIR MICROSCOPY; HIGH-PURITY SILICON; ION IMPLANTED; LOCAL VARIATIONS; NANO-IMAGING; NANO-METER SCALE; NEAR-FIELD; NON-INVASIVE; RAMAN MICROSCOPY; SILICON SUBSTRATES; STRUCTURAL DISORDERS; VIBRATIONAL IMAGING;

COPPER; DIELECTRIC PROPERTIES; IMAGING TECHNIQUES; LIGHT EMISSION; METAL IONS; PHOSPHORS; SEMICONDUCTING SILICON COMPOUNDS;

SILICON WAFERS;

EID: 79961108759     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3606415     Document Type: Article

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