The effects of temperature and KOH concentration on silicon etching rate and membrane surface roughness

IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE

Volumn , Issue , 2002, Pages 524-528

  Noor, Mimiwaty Mohd ^a   Bais, Badariah ^a   Majlis, Burhanuddin Yeop ^a  

^a UNIVERSITI KEBANGSAAN MALAYSIA   (Malaysia)

Author keywords

[No Author keywords available]

Indexed keywords

EFFECTS OF TEMPERATURE; ETCHING PROFILE; ETCHING RATE; KOH CONCENTRATION; MEMBRANE FORMATION; MEMBRANE SURFACE; SILICON ETCHING; SILICON MEMBRANES;

ETCHING; SURFACE ROUGHNESS;

TEMPERATURE;

EID: 79961045682     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (3)

1. Marc Madou, Fundamentals of Microfabrication. CRC Press (1997).
2. Julian W. Gardner, Microsensors Principles andApplicafions, John Wiley & Sons Inc (1994)
3. K. Sato, M. Shikida, T. Yamashiro, M. Tsunekawa and S. Ito, "Characterization Of Anisotropic Etching Properties Of Single-Crystal Silicon: Surface Roughening As A Function Of Crystallograpic Orientation. " Dept. of Micro System Engineering, Nagoya University Chikusa, Nagoya, 46401, Japan (1998)