Electrically tunable hole tunnelling from a single self-assembled quantum dot embedded in an n-i-Schottky photovoltaic cell

Applied Physics Letters

Volumn 99, Issue 3, 2011, Pages

  Mar, J D ^a,b   Xu, X L ^a   Baumberg, J J ^b   Irvine, A C ^b   Stanley, C ^c   Williams, D A ^a  

^a HITACHI CAMBRIDGE LABORATORY   (United Kingdom)

^b UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^c UNIVERSITY OF GLASGOW   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRICALLY TUNABLE; HOLE CONFINEMENT; INAS/GAAS; NEUTRAL EXCITONS; ORDERS OF MAGNITUDE; PEAK AMPLITUDE; SELF ASSEMBLED QUANTUM DOTS; THEORETICAL MODELS; VERTICAL ELECTRIC FIELDS;

ELECTRIC FIELDS; PHOTOVOLTAIC CELLS; SEMICONDUCTOR QUANTUM DOTS;

LASER EXCITATION;

EID: 79960808427     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3614418     Document Type: Article

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