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Applied Physics Letters

Volumn 99, Issue 3, 2011, Pages

Correlation of residual impurity concentration and acceptor electron paramagnetic resonance linewidth in isotopically engineered Si

(9) Stegner, A R a Tezuka, H b Riemann, H c Abrosimov, N V c Becker, P d Pohl, H J e Thewalt, M L W f Itoh, K M b Brandt, M S a

a WALTER SCHOTTKY INSTITUT (Germany)

b KEIO UNIVERSITY (Japan)

c LEIBNIZ INSTITUTE FOR CRYSTAL GROWTH (Germany)

d PHYSIKALISCH TECHNISCHE BUNDESANSTALT (Germany)

e VITCON Projectconsult GmbH (Germany)

f SIMON FRASER UNIVERSITY (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

IMPURITY LEVEL; INTER-SUBBAND; LINEAR CORRELATION; RESIDUAL IMPURITIES;

BORON; BORON COMPOUNDS; ELECTRON RESONANCE; ELECTRON SPIN RESONANCE SPECTROSCOPY; ISOTOPES; PARAMAGNETIC MATERIALS; PARAMAGNETISM; POINT DEFECTS;

PARAMAGNETIC RESONANCE;

EID: 79960759532 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3606548 Document Type: Article

Times cited : (5)

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