Direct study of nonlinear carrier recombination in InGaN quantum well structures

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 8, Issue 7-8, 2011, Pages 2381-2383

  Malinauskas, Tadas ^a   Miasojedovas, Saulius ^a   Aleksiejunas, Ramunas ^a   Juršenas, Saulius ^a   Jarašiunas, Kestutis ^a   Nomura, Masahiro ^b   Arakawa, Yasuhiko ^b   Shimura, Tsutomu ^b   Kuroda, Kazuo ^b  

^a VILNIUS UNIVERSITY   (Lithuania)

^b INSTITUTE OF INDUSTRIAL SCIENCE   (Japan)

Author keywords

InGaN; QW; Recombination

Indexed keywords

AUGER RECOMBINATION; CARRIER RECOMBINATION; CARRIER RECOMBINATION DYNAMICS; DIRECT MEASUREMENT; EXCESS CARRIERS; HIGH CARRIER INJECTION; INGAN; INGAN QUANTUM WELLS; NONLINEAR CARRIER; PICOSECONDS; QUADRATIC DEPENDENCE; QW; RECOMBINATION; SHOCKLEY-READ-HALL; TIME-RESOLVED PHOTOLUMINESCENCE; TRANSIENT GRATING; WELL THICKNESS;

GALLIUM; GALLIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES;

SEMICONDUCTOR QUANTUM WELLS;

EID: 79960736366     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.201000997     Document Type: Article

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