Intrinsic origin of the breakdown of quasi-cubic approximation in nitride semiconductors

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 8, Issue 7-8, 2011, Pages 2279-2281

  Ebihara, Yasuhiro ^a   Kamiya, Katsumasa ^a   Shiraishi, Kenji ^a   Yamaguchi, Atsushi A ^b  

^a UNIVERSITY OF TSUKUBA   (Japan)

^b KANAZAWA INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Deformation potential; DFT; GaN; Strain

Indexed keywords

ACTIVE LAYER; BIAXIAL STRAINS; DEFORMATION POTENTIAL; DEGREE OF FREEDOM; DFT; FIRST-PRINCIPLES CALCULATION; GAN; HEXAGONAL GAN; INTERNAL PARAMETERS; LARGE STRAINS; NITRIDE SEMICONDUCTORS; NON-LINEARITY; UNSTRAINED MATERIALS; WURTZITE STRUCTURE;

CALCULATIONS; DEFORMATION; ZINC SULFIDE;

GALLIUM NITRIDE;

EID: 79960725604     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.201001085     Document Type: Article

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