Injection characteristics of polar and nonpolar multiple-QW structures and active region ballistic overshoot

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 8, Issue 7-8, 2011, Pages 2264-2266

  Kisin, Mikhail V ^a   El Ghoroury, Hussein S ^a  

^a Ostendo Technologies Inc   (United States)

Author keywords

Ballistic overshoot; Carrier leakage; Diode lasers; Injection efficiency

Indexed keywords

ACTIVE REGIONS; CARRIER LEAKAGE; DIODE STRUCTURE; DRIFT-DIFFUSION APPROXIMATION; ELECTRON CONCENTRATION; ELECTRON TRANSPORT; HIGH INJECTION; III-NITRIDE; INJECTION EFFICIENCY; LED EFFICIENCIES; NON-POLAR; NON-RADIATIVE RECOMBINATIONS; NONPOLAR STRUCTURES; WAVEGUIDE LAYERS;

DIODES; LIGHT EMITTING DIODES; NITRIDES; SEMICONDUCTOR LASERS;

BALLISTICS;

EID: 79960712384     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.201000891     Document Type: Article

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