Effect of "Mexican hat" on graphene bilayer field-effect transistor characteristics

Japanese Journal of Applied Physics

Volumn 50, Issue 7 PART 1, 2011, Pages

  Svintsov, Dmitry ^a,b   Vyurkov, Vladimir ^a,b   Ryzhii, Victor ^c,e   Otsuji, Taiichi ^d,e  

^a Institute of Physics and Technology of the Russian Academy of Sciences   (Russian Federation)

^b MOSCOW INSTITUTE OF PHYSICS AND TECHNOLOGY   (Russian Federation)

^c UNIVERSITY OF AIZU   (Japan)

^d TOHOKU UNIVERSITY   (Japan)

^e JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BALLISTIC MODEL; BI-LAYER; CONDUCTANCE QUANTIZATION; ELECTRON LOCALIZATIONS; ELECTRONIC SPECTRUM; HIGH FREQUENCY HF; LOW TEMPERATURES; ONE-DIMENSIONAL CONDUCTORS; POTENTIAL BARRIERS; ROOM TEMPERATURE;

ANALOG CIRCUITS; MESFET DEVICES; TRANSISTORS;

GRAPHENE;

EID: 79960682325     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.50.070112     Document Type: Article

References (6)

1. E. McCann, D. S. L. Abergel, and V. I. Falco: Eur. Phys. J. Spec. Top. 148 (2007) 91.
2. V. Ryzhii, M. Ryzhii, A. Satou, T. Otsuji, and N. Kirova: J. Appl. Phys. 105 (2009) 104510.
3. M. Cheli, G. Fiori, and G. Iannaccone: IEEE Trans. Electron Devices 56 (2009) 2979.
4. E. Sano and T. Otsuji: Jpn. J. Appl. Phys. 48 (2009) 091605.
5. V. Vyurkov, I. Semenikhin, V. Lukichev, A. Orlikovsky, and A. Burenkov: Proc. SPIE 7025 (2008) 70251K.
6. L. A. Falkovsky: J. Exp. Theor. Phys. 110 (2010) 319.