Local electrical stress-induced doping and formation of monolayer graphene P-N junction

Applied Physics Letters

Volumn 98, Issue 24, 2011, Pages

  Yu, Tianhua ^a   Liang, Chen Wei ^a   Kim, Changdong ^a   Yu, Bin ^a  

^a STATE UNIVERSITY OF NEW YORK   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

N-TYPE DOPING; P-N JUNCTION; P-TYPE; P-TYPE DOPING; PHYSICAL MECHANISM; STRESS-INDUCED; TRANSFER CHARACTERISTICS;

CHARGE TRANSFER; ION EXCHANGE; MONOLAYERS; SEMICONDUCTOR JUNCTIONS; SILICON COMPOUNDS; SURFACE CHEMISTRY;

GRAPHENE;

EID: 79960618174     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3593131     Document Type: Article

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