Electrical resistivity of the hole doped La0.8Sr 0.2MnO3 manganites: Role of electron-electron/phonon/ magnon interactions

Materials Chemistry and Physics

Volumn 129, Issue 3, 2011, Pages 896-904

  Varshney, Dinesh ^a   Dodiya, N ^a  

^a DEVI AHILYA UNIVERSITY   (India)

Author keywords

A. Magnetic materials; C. Computational techniques; D. Electrical properties; Phonon

Indexed keywords

A. MAGNETIC MATERIALS; BLOCH-GRUNEISEN; COMPUTATIONAL TECHNIQUE; EINSTEIN TEMPERATURE; ELECTRICAL PROPERTY; ELECTRICAL RESISTIVITY; ELECTRON PHONON; ELECTRON-MAGNON INTERACTION; ELECTRON-MAGNON SCATTERING PROCESS; EXPERIMENTAL DATA; HIGH-TEMPERATURE REGIME; HIGHER TEMPERATURES; INTERACTION POTENTIALS; LOW-TEMPERATURE REGIME; MAGNON INTERACTIONS; PEROVSKITE MANGANITES; REPULSIVE INTERACTIONS; SMALL POLARONS; VAN DER WAALS INTERACTION; VARIABLE RANGE HOPPING MODEL; VRH MODEL;

ELECTRIC CONDUCTIVITY; ELECTRON-PHONON INTERACTIONS; MAGNETIC MATERIALS; MANGANESE OXIDE; MANGANITES; PEROVSKITE; POLARONS; VAN DER WAALS FORCES;

ELECTRONS;

EID: 79960559183     PISSN: 02540584     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.matchemphys.2011.05.034     Document Type: Article

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