Strain response of high mobility germanium n-channel metal-oxide- semiconductor field-effect transistors on (001) substrates

Applied Physics Letters

Volumn 99, Issue 2, 2011, Pages

  Chen, Y T ^a   Lan, H S ^a   Hsu, W ^a   Fu, Y C ^b   Lin, J Y ^a   Liu, C W ^a,b  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

^b NATIONAL NANO DEVICE LABORATORIES   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CHANNEL DIRECTIONS; HIGH ELECTRIC FIELDS; HIGH MOBILITY; INTERFACE TRAP DENSITY; METAL-OXIDE; METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR; MOBILITY ENHANCEMENT; N-CHANNEL; ON/OFF RATIO; PEAK MOBILITY; RAPID THERMAL OXIDATION; SEMICONDUCTOR FIELD-EFFECT TRANSISTORS; STRAIN RESPONSE; SURFACE ROUGHNESS SCATTERING;

DIELECTRIC DEVICES; ELECTRIC FIELDS; GERMANIUM; GERMANIUM OXIDES; ION BEAMS; MOSFET DEVICES; PASSIVATION; SURFACE ROUGHNESS; TRANSISTORS;

TENSILE STRAIN;

EID: 79960504385     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3604417     Document Type: Article

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