The effect of annealing on the room temperature ferromagnetism in co-sputtered In2O3: C thin films

Journal of Magnetism and Magnetic Materials

Volumn 323, Issue 22, 2011, Pages 2841-2845

  Khan, R A ^a   Bhatti, A S ^a   Kaibin, Ruan ^b  

^a Park Road Campus ^*  (Pakistan)

^b NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

Author keywords

Co sputtering; DMS; In2O3; Room temperature ferromagnetism

Indexed keywords

C SUBSTITUTION; C-DOPED; CARBON CONCENTRATIONS; CARBON DOPED FILMS; CO-SPUTTERING METHOD; COSPUTTERING; DMS; MAXIMUM VALUES; ROOM TEMPERATURE FERROMAGNETISM; RT FERROMAGNETISM; SI SUBSTRATES;

FERROMAGNETISM; MAGNETIZATION; OXYGEN; OXYGEN VACANCIES; THIN FILMS;

CARBON FILMS;

EID: 79960455450     PISSN: 03048853     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jmmm.2011.06.032     Document Type: Article

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