Temperature effects on output power of piezoelectric vibration energy harvesters

Microelectronics Journal

Volumn 42, Issue 8, 2011, Pages 988-991

  Kim, Seon Bae ^a   Park, Jung Hyun ^b   Ahn, Hosang ^a   Liu, Dan ^a   Kim, Dong Joo ^a  

^a AUBURN UNIVERSITY   (United States)

^b ARGONNE NATIONAL LABORATORY   (United States)

Author keywords

Energy harvester; MEMS; Piezoelectric device; Temperature effect

Indexed keywords

BULK DEVICES; CONSTRAINED DOMAIN; ENERGY HARVESTER; ENVIRONMENT TEMPERATURE; EQUIVALENT CIRCUIT MODEL; EXPERIMENTAL DATA; MATERIAL PARAMETER; MEMSDEVICES; OUTPUT POWER; PIEZOELECTRIC CONSTANT; PIEZOELECTRIC COUPLINGS; PIEZOELECTRIC VIBRATION; PZT; PZT FILM; SCALING EFFECTS; SQUARE ROOTS; TEMPERATURE DEPENDENCE; TEMPERATURE EFFECT; THERMAL DEGRADATION RATE;

DEGRADATION; ENERGY HARVESTING; EQUIPMENT; HARVESTERS; TEMPERATURE DISTRIBUTION;

PIEZOELECTRICITY;

EID: 79960212360     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mejo.2011.05.005     Document Type: Article

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