Electrical performances of tellurium-rich GexTe1-x phase change memories

2011 3rd IEEE International Memory Workshop, IMW 2011

Volumn , Issue , 2011, Pages

  Navarro, G ^a   Pashkov, N ^a   Suri, M ^a   Zuliani, P ^b   Annunziata, R ^b   Sousa, V ^a   Perniola, L ^a   Maitrejean, S ^a   Persico, A ^a   Roule, A ^a   Toffoli, A ^a   De Salvo, B ^a  

^a CEA LETI   (France)

^b STMICROELECTRONICS   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS PHASE; CRYSTALLIZATION TEMPERATURE; DATA RETENTION; ELECTRICAL PERFORMANCE; HIGH RESISTIVE STATE;

AMORPHOUS MATERIALS; GERMANIUM; PHASE STABILITY; TELLURIUM; TELLURIUM COMPOUNDS;

PHASE CHANGE MEMORY;

EID: 79959955456     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IMW.2011.5873232     Document Type: Article

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