Temperature and gate voltage dependent raman spectra of single-layer graphene

ACS Nano

Volumn 5, Issue 6, 2011, Pages 5273-5279

  Nguyen, Khoi T ^a   Abdula, Daner ^a   Tsai, Cheng Lin ^a   Shim, Moonsub ^a  

^a University of Illinois at Urbana Champaign   (United States)

Author keywords

electrostatic gating; graphene; Raman spectroscopy; substrate; thermometry

Indexed keywords

BAND FREQUENCIES; DOPING LEVELS; FIRST-ORDER; G-BAND FREQUENCIES; GATE VOLTAGES; HEATING CYCLES; INTRINSIC BEHAVIOR; LATTICE THERMAL EXPANSION; NEAR ROOM TEMPERATURE; NEGATIVE X; ROOM TEMPERATURE; SINGLE LAYER; TEMPERATURE COEFFICIENT; TEMPERATURE DEPENDENCE; THERMALLY INDUCED; THERMOMETRY; ZERO CHARGE;

GRAPHENE; RAMAN SCATTERING; RAMAN SPECTROSCOPY; SILICON COMPOUNDS; THERMAL EXPANSION;

SUBSTRATES;

EID: 79959793393     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn201580z     Document Type: Article

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