SCOPUS 정보 검색 플랫폼

Volumn 98, Issue 19, 2011, Pages

Reliability of bottom-gate graphene field-effect transistors prepared by using inductively coupled plasma-chemical vapor deposition

(7) Lee, Jung Kyu a Chung, Hyun Jong b Heo, Jinseong b Seo, Sunae b Cho, Il Hwan c Kwon, Hyuck In d Lee, Jong Ho a

a Seoul National University (South Korea)

b Samsung Advanced Institute of Technology (SAIT) (South Korea)

c Myong Ji University (South Korea)

d Chung Ang University (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

BULK DIELECTRIC; INDUCTIVELY-COUPLED; STRESS CONDITION; TEMPERATURE STRESS; TIME DEPENDENCE; TRANSFER CHARACTERISTICS; TRANSFER CURVES; TRAPPING/DETRAPPING; VAPOR DEPOSITION METHOD;

CHEMICAL STABILITY; CHEMICAL VAPOR DEPOSITION; CURVE FITTING; GRAPHENE; INDUCTIVELY COUPLED PLASMA; PLASMA DEPOSITION; PLASMA STABILITY; TRANSISTORS;

FIELD EFFECT TRANSISTORS;

EID: 79959645800 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3589120 Document Type: Article

Times cited : (11)

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