Design and experimental characterization of a new built-in defect-based testing technique to achieve zero defects in the automotive environment

IEEE Transactions on Device and Materials Reliability

Volumn 11, Issue 2, 2011, Pages 349-357

  Malandruccolo, Vezio ^a   Ciappa, Mauro ^a   Rothleitner, Hubert ^b   Fichtner, Wolfgang ^a  

^a ETH ZURICH   (Switzerland)

^b INFINEON TECHNOLOGIES AUSTRIA AG   (Austria)

Author keywords

Built in self test; burn in; crystal defects; gate oxide reliability; gate stress test (GST)

Indexed keywords

AUTOMOTIVE APPLICATIONS; AUTOMOTIVE ENVIRONMENT; BURN-IN; CONTROL LOGIC; DEFECT-BASED TESTING; DEFECTIVITY; EARLY FAILURE; EXPERIMENTAL CHARACTERIZATION; GATE OXIDE; GATE OXIDE RELIABILITY; GATE STRESS; HIGH-VOLTAGES; IN-LINE; LATERAL DIFFUSED MOS; LEAKAGE CURRENT MONITORING; SCREENING PROCEDURES; TEST CHIPS; ZERO DEFECTS;

BUILT-IN SELF TEST; CRYSTAL DEFECTS; TRANSISTOR TRANSISTOR LOGIC CIRCUITS;

GATES (TRANSISTOR);

EID: 79959521433     PISSN: 15304388     EISSN: 15304388     Source Type: Journal    
DOI: 10.1109/TDMR.2011.2135354     Document Type: Article

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