Subband light emission from phosphorous-doped amorphous Si/SiO2 multilayers at room temperature

Chinese Physics Letters

Volumn 28, Issue 6, 2011, Pages

  Sun, Hong Cheng ^a   Xu, Jun ^a   Liu, Yu ^a   Mu, Wei Wei ^a   Xu, Wei ^a   Li, Wei ^a   Chen, Kun Ji ^a  

^a NANJING UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; HYDROGENATION; LIGHT; LUMINESCENCE; MULTILAYERS; PHOSPHORUS; PLASMA CVD;

AMORPHOUS SI; CRYSTALLIZATION TEMPERATURE; INFRARED EMISSIONS; INFRARED LIGHT; LUMINESCENCE PROPERTIES; MICRO-STRUCTURAL PROPERTIES; MULTILAYER STRUCTURES; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION SYSTEMS; SUBBANDS; VISIBLE LIGHT EMISSION;

PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION;

EID: 79959458572     PISSN: 0256307X     EISSN: 17413540     Source Type: Journal    
DOI: 10.1088/0256-307X/28/6/067802     Document Type: Article

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