Fano resonance in heavily doped porous silicon

Journal of Raman Spectroscopy

Volumn 42, Issue 6, 2011, Pages 1405-1407

  Pusep, Y A ^a   Rodrigues, A D ^b   Borrero Gonzalez L J ^a   Acquaroli, L N ^c   Urteaga, R ^c   Arce, R D ^c   Koropecki, R R ^c   Tirado, M ^d   Comedi, D ^d  

^a UNIVERSITY OF SÃO PAULO   (Brazil)

^b FEDERAL UNIVERSITY OF SÃO CARLOS   (Brazil)

^c Instituto de Desarrollo Tecnologico para la Industria Quimica   (Argentina)

^d UNIVERSIDAD NACIONAL DE TUCUMÁN   (Argentina)

Author keywords

porous silicon; Raman spectroscopy

Indexed keywords

INTERFACE STATES; RAMAN SCATTERING; RAMAN SPECTROSCOPY; SILICA; SILICON OXIDES;

CONTINUUM ELECTRONS; ELECTRON EXCITATIONS; FANO RESONANCES; GAP ENERGY; HEAVILY DOPED; INTERFACES STATE; LONGITUDINAL OPTICAL PHONONS; POROUS SI; SI-SIO 2 INTERFACE;

POROUS SILICON;

EID: 79959445378     PISSN: 03770486     EISSN: 10974555     Source Type: Journal    
DOI: 10.1002/jrs.2870     Document Type: Article

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