A method for fabricating below 22nm feature patterns in quartz mold

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 6921, Issue , 2008, Pages

  Terasaki, Atsunori ^a   Seki, Junichi ^a   Ono, Haruhito ^a  

^a CANON INC   (Japan)

Author keywords

Cr; Etching selectivity; Mold; Nanoimprint; Quartz; Resolution; Reverse EB process; SOG

Indexed keywords

ELECTRON BEAM RESIST; ETCHING SELECTIVITY; FEATURE PATTERN; FINE PATTERN; HARD MASKS; NANO-IMPRINT; RESIST THICKNESS REDUCTION; REVERSE EB PROCESS; SOG; UV-CURABLE RESINS;

ELECTRON BEAM LITHOGRAPHY; ETCHING; NANOIMPRINT LITHOGRAPHY; PHOTORESISTS; QUARTZ;

MOLDS;

EID: 79959367780     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.771561     Document Type: Conference Paper

References (2)

1. K. H. Smith, J. R. Wasson, P. J. S. Mangat, W. J. Dauksher, and D. J. Resnick, " Cr absorber etch process for extreme ultraviolet lithography mask fabrication " J. Vac. Sci. Technol. B 19, 2906 (2001).
2. Gerard Schmid, Ecron Thompson, Nick Stacey, Doug Resnick, Deirdre Olynick, Erik Anderson, "Toward 22 nm for Unit Process Development Using Step and Flash Imprint Lithography" Proc. SPIE 6517, 651717 (2007).