Radiation resistance of GaAs solar cells and hot carriers

Solar Energy Materials and Solar Cells

Volumn 95, Issue 9, 2011, Pages 2551-2556

  Danilchenko, B A ^a   Budnyk, A P ^a   Shpinar, L I ^a   Yaskovets, I I ^a   Barnham, K W J ^b   Ekins Daukes, N J ^b  

^a INSTITUTE OF PHYSICS   (Ukraine)

^b IMPERIAL COLLEGE LONDON   (United Kingdom)

Author keywords

Degradation; Electron irradiation; GaAs solar cells; Hot carriers

Indexed keywords

ACTIVE REGIONS; CARRIER ACCUMULATION; CARRIER CAPTURE; CARRIER ENERGY; FITTING PARAMETERS; GAAS SOLAR CELLS; IRRADIATION DOSE; MINORITY CARRIER; NON-STATIONARY CONDITION; NONSTATIONARY; OPTICAL PHONON ENERGIES; RADIATION RESISTANCE; SOLAR CELL DEGRADATION; TEMPORAL EVOLUTION;

DEGRADATION; GALLIUM ALLOYS; GALLIUM ARSENIDE; HOT CARRIERS; IRRADIATION; RADIATION DAMAGE; SEMICONDUCTING GALLIUM;

RADIATION;

EID: 79959302787     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solmat.2011.02.033     Document Type: Article

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