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Volumn 2011, Issue , 2011, Pages

Modelling of an Esaki tunnel diode in a circuit simulator

Author keywords

[No Author keywords available]

Indexed keywords

CIRCUIT SIMULATORS; ESAKI TUNNELS; INTERMEDIATE STATE; NONLINEAR CHARACTERISTICS; STRONGLY NONLINEAR;

EID: 79959259891     PISSN: 08827516     EISSN: 15635031     Source Type: Journal    
DOI: 10.1155/2011/830182     Document Type: Article
Times cited : (7)

References (12)
  • 3
    • 36149018587 scopus 로고
    • New phenomenon in narrow germanium p-n junctions
    • Esaki L., New phenomenon in narrow germanium p-n junctions Physical Review 1958 109 2 603 604
    • (1958) Physical Review , vol.109 , Issue.2 , pp. 603-604
    • Esaki, L.1
  • 8
    • 0027578157 scopus 로고
    • Analysis of heterojunction bipolar transistor/resonant tunneling diode logic for low-power and high-speed digital applications
    • Chang C. E., Asbeck P. M., Wang K. C., Brown E. R., Analysis of heterojunction bipolar transistor/resonant tunneling diode logic for low-power and high-speed digital applications IEEE Transactions on Electron Devices 1993 40 4 685 691
    • (1993) IEEE Transactions on Electron Devices , vol.40 , Issue.4 , pp. 685-691
    • Chang, C.E.1    Asbeck, P.M.2    Wang, K.C.3    Brown, E.R.4
  • 12
    • 0025468676 scopus 로고
    • Expanding the power-handling capabilities of harmonic-balance analysis by a parametric formulation of the MESFET model
    • Rizzoli V., Neri A., Expanding the power-handling capabilities of harmonic-balance analysis by a parametric formulation of the MESFET model Electronics Letters 1990 26 17 1359 1361 (Pubitemid 20733818)
    • (1990) Electronics Letters , vol.26 , Issue.17 , pp. 1359-1361
    • Rizzoli, V.1    Neri, A.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.