Chromium porphyrin arrays as spintronic devices

Journal of the American Chemical Society

Volumn 133, Issue 24, 2011, Pages 9364-9369

  Cho, Woo Jong ^a   Cho, Yeonchoo ^a   Min, Seung Kyu ^a   Kim, Woo Youn ^b   Kim, Kwang S ^a  

^a Pohang University of Science and Technology (POSTECH)   (South Korea)

^b Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

AU ELECTRODES; ELECTRON TRANSPORT; EXTERNAL MAGNETIC FIELD; FABRICATION METHOD; FERROMAGNETIC STATE; FLEXIBLE DEVICE; HALF METALS; HALF-METALLIC BEHAVIOR; HALF-METALLIC PROPERTIES; HIGH SPIN STATE; NON-EQUILIBRIUM GREEN FUNCTIONS; PORPHYRIN ARRAYS; SPIN ASYMMETRY; SPIN ELECTRONS; SPIN FILTERING; SPIN FILTERS; SPINTRONIC DEVICE;

CHROMIUM; ELECTRON MOBILITY; ENERGY GAP; INFORMATION TECHNOLOGY; MAGNETIC FIELDS; ORGANOMETALLICS; PORPHYRINS;

EQUIPMENT;

CHROMIUM; METAL ORGANIC FRAMEWORK; PORPHYRIN;

ARTICLE; ATOM; CHEMICAL STRUCTURE; ELECTRON; ELECTRON TRANSPORT; ELECTRONICS; MAGNETIC FIELD; SPINTRONIC DEVICE; SYNTHESIS;

EID: 79959227450     PISSN: 00027863     EISSN: 15205126     Source Type: Journal    
DOI: 10.1021/ja111565w     Document Type: Article

References (54)

1. Aviram, A; Ratner, M. A. Chem. Phys. Lett. 1974, 29, 277-283
2. Cuniberti, G.; Fagas, G.; Richter, K. Introducing Molecular Electronics; Springer: Berlin and Heidelberg, 2005.
3. Di Ventra, M. Electrical Transport in Nanoscale Systems; Cambridge University Press: Cambridge, 2008.
4. Datta, S.; Das, B. Appl. Phys. Lett. 1990, 56, 665-667
5. Kim, W. Y.; Kim, K. S. Acc. Chem. Res. 2010, 43, 111-120
6. Herrmann, C.; Solomon, G. C.; Ratner, M. A. J. Am. Chem. Soc. 2010, 132, 3682-3684
7. Kim, W. Y.; Choi, Y. C.; Kim, K. S. J. Mater. Chem. 2008, 18, 510-4521
8. Kim, W. Y.; Choi, Y. C.; Min, S. K.; Cho, Y.; Kim, K. S. Chem. Soc. Rev. 2009, 38, 2319-2333
9. Wolf, S. A.; Awschalom, D. D.; Buhrman, R. A.; Daughton, J. A.; von Molnár, S.; Roukes, M. L.; Chtchelkanova, A. Y.; Treger, D. M. Science 2001, 294, 1488-1495
10. Lakshmi, S.; Roche, S.; Cuniberti, G. Phys. Rev. B 2009, 80, 193404
11. Ohno, H. Science 1998, 281, 951-956
12. Folk, J. A.; Potok, R. M.; Marcus, C. M.; Umansky, V. Science 2003, 299, 679-682
13. Park, J. H.; Vescovo, E.; Kim, H. J.; Kwon, C.; Ramesh, R.; Venkatesan, T. Nature 1998, 392, 794-796
14. Hwang, H. Y.; Cheong, S. W. Science 1997, 278, 1607-1609
15. Tsukagoshi, K.; Alphenaar, B. W.; Ago, H. Nature 1999, 401, 572-574
16. Kikkawa, J. M.; Awschalom, D. D. Nature 1999, 397, 139-141
17. Sanvito, S. J. Mater. Chem. 2007, 17, 4455-4459
18. Lee, E. C.; Choi, Y. C.; Kim, W. Y.; Singh, N. J.; Lee, S.; Shim, J. H.; Kim, K. S. Chem.-Eur. J. 2010, 16, 12141-12146
19. Son, Y.; Cohen, M. L.; Louie, S. G. Nature 2006, 444, 347-349
20. Luo, P.; Lee, J. Y. J. Phys. Chem. C 2009, 113, 12637-12640
21. Dutta, S.; Manna, A. K.; Pati, S. K. Phys. Rev. Lett. 2009, 102, 096601
22. Martins, T. B.; da Silva, A. J. R.; Miwa, R. H.; Fazzio, A. Nano Lett. 2008, 8, 2293-2298
23. Son, Y. W.; Cohen, M. L.; Louie, S. G. Phys. Rev. Lett. 2006, 97, 216803
24. Hod, O.; Barone, V.; Peralta, J. E.; Scuseria, G. E. Nano Lett. 2007, 7, 2295-2299
25. Maslyuk, V. V.; Bagrets, A.; Meded, V.; Arnold, A.; Evers, F.; Brandbyge, M.; Bredow, T.; Mertig, I. Phys. Rev. Lett. 2006, 97, 097201
26. Wang, L.; Cai, Z.; Wang, J.; Lu, J.; Luo, G.; Lai, L; Zhou, J.; Qin, R.; Gao, Z.; Yu, D.; Li, G.; Mei, W. N.; Sanvito, S. Nano Lett. 2008, 8, 3640-3644
27. Zhang, Z.; Wu, X.; Guo, W.; Zeng, X. C. J. Am. Chem. Soc. 2010, 132, 10215-10217
28. Zhou, L.; Yang, S.; Ng, M.; Sullivan, M. B.; Tan, V. B. C.; Shen, L. J. Am. Chem. Soc. 2008, 130, 4023-4027
29. Wu, X.; Zeng, X. C. J. Am. Chem. Soc. 2009, 131, 14246-14248
30. Diefenbach, M.; Kim, K. S. Angew. Chem., Int. Ed. 2007, 46, 7640-7643
31. Kang, B. K.; Aratani, N.; Lim, J. K.; Kim, D.; Osuka, A.; Yoo, K. Chem. Phys. Lett. 2005, 412, 303-306
32. Tagami, K.; Tsukada, M.; Matsumoto, T.; Kawai, T. Phys. Rev. B. 2003, 67, 245324
33. Long, M.; Chen, K.; Wang, L.; Qing, W.; Zou, B. S.; Shuai, Z. Appl. Phys. Lett. 2008, 92, 243303
34. Ribeiro, F. J.; Lu, W. C.; Bernholc, J. ACS Nano 2008, 2, 1517-1522
35. Holten, D.; Bocian, D. F.; Lindsey, J. S. Acc. Chem. Res. 2002, 35, 57-69
36. Yamaguchi, Y. J. Chem. Phys. 2002, 117, 9688-9694
37. Chen, Y.; Prociuk, A.; Perrine, T.; Dunietz, B. D. Phys. Rev. B 2006, 74, 245320
38. Tsuda, A.; Osuka, A. Science 2001, 293, 79-82
39. Reed, C. A.; Kouba, J. K.; Grimes, C. J.; Cheung, S. K. Inorg. Chem. 1978, 17, 2666-2670
40. Collman, J. P.; Hoard, J. L.; Kim, N.; Lang, G.; Reed, C. A. J. Am. Chem. Soc. 1975, 97, 2676-2681
41. Wang, X.; Gray, S. D.; Chen, J.; Woo, L. K. Inorg. Chem. 1998, 37, 5-9
42. Aratani, N.; Osuka, A.; Kim, Y. H.; Jeong, D. H.; Kim, D. Angew. Chem., Int. Ed. 2000, 39, 1458-1462
43. Kim, W. Y.; Kim, K. S. J. Comput. Chem. 2008, 29, 1073-1083
44. Kim, W. Y.; Kim, K. S. Nat. Nanotechnol. 2008, 3, 408-412
45. Min, S. K.; Kim, W. Y. Kim; Cho, Y.; Kim, K. S. Nat. Nanotechnol. 2011, 6, 162-165
46. Kresse, G.; Furthmüller, J. Phys. Rev. B 1996, 54, 11169
47. Perdew, J. P.; Burke, K.; Ernzerhof, M. Phys. Rev. Lett. 1996, 77, 3865-3868
48. Kresse, G.; Joubert, D. Phys. Rev. B 1999, 59, 1758-1775
49. Soler, J. M.; Artacho, E.; Gale, J. D.; García, A.; Junquera, J.; Ordej, P.; Sanchez-Portal, D. J. Phys.: Condens. Matter 2002, 14, 2745-2779
50. Frisch, M. J. Gaussian 09, Revision A.1; Gaussian, Inc.: Wallingford CT, 2009.
51. Liao, M.; Scheiner, S. J. Chem. Phys. 2002, 117, 205-219
52. Youn, S. J.; Sahu, B. R.; Kim, K. S. Phys. Rev. B. 2002, 65, 052415
53. Rohrbach, A.; Hafner, J.; Kresse, G. Phys. Rev. B 2004, 69, 075413
54. The sharp resonance transmission peak near the Fermi energy may entail non-negligible interactions of a charge carrier with other electrons or phonons due to its finite traverse time, which cannot be captured by a single-particle picture such as the Landuer-Büttiker formula. However, the formula is still valid in a low-bias and low-temperature limit if the couplings between a molecule and electrodes like our case are sufficiently strong so that electron transfer is occurred within a very short time. More details are discussed in the Supporting Information.