Luminescence of dense, octahedral structured crystalline silicon dioxide (stishovite)

Journal of Luminescence

Volumn 131, Issue 11, 2011, Pages 2273-2278

  Trukhin, A N ^a   Smits, K ^a   Sharakosky, A ^a   Chikvaidze, G ^a   Dyuzheva, T I ^b   Lityagina, L M ^b  

^a UNIVERSITY OF LATVIA   (Latvia)

^b INSTITUTE FOR HIGH PRESSURE PHYSICS   (Russian Federation)

Author keywords

Excimer laser; Host defects; Photoluminescence; Stishovite

Indexed keywords

ARF LASER; AS-GROWN; AVERAGE VALUES; BAND RECOMBINATION; CHARACTERISTIC TIME; CRYSTALLINE SILICONS; EXCIMERS; EXPONENTIAL DECAYS; HOST DEFECTS; KRF LASERS; LUMINESCENCE CENTERS; LUMINESCENCE INTENSITY; OH GROUP; OXYGEN DEFICIENT; PL BANDS; POWER LAW DECAY; QUARTZ CRYSTAL; RECOMBINATION PROCESS; SLOW COMPONENT; STISHOVITE; TEMPERATURE RANGE; THERMAL QUENCHING; TIME CONSTANTS; TWO-COMPONENT; UV BANDS; UV- AND; X RAY LUMINESCENCE; X-RAY EXCITATION;

ACTIVATION ENERGY; DECAY (ORGANIC); DIFFRACTIVE OPTICS; ELECTRON BEAMS; EXCIMER LASERS; LASER EXCITATION; LIGHT EMISSION; PHOTOLUMINESCENCE; QUARTZ; SINGLE CRYSTALS; X RAYS;

PULSED LASERS;

EID: 79959223171     PISSN: 00222313     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jlumin.2011.05.062     Document Type: Article

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