Metal-free disordered vertical sub-micron silicon wires produced from eElectrochemical p-type porous silicon layers

Electrochemical and Solid-State Letters

Volumn 14, Issue 8, 2011, Pages

  Gautier, G ^a   Defforge, T ^a   Kouassi, S ^a   Coudron, L ^a  

^a UNIVERSITÉ DE TOURS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

MACRO POROUS SILICON; MESOPOROUS SILICON; P-TYPE; P-TYPE SILICON; POROUS SILICON LAYERS; RESULTING MATERIALS; SILICON WIRES; SUB-MICRON WIRES; SUBMICRON; WIRE DIAMETER;

ACETIC ACID; ASPECT RATIO; ETCHING; MONOCRYSTALLINE SILICON; SEMICONDUCTING SILICON COMPOUNDS; SILICON WAFERS; WIRE;

POROUS SILICON;

EID: 79959193718     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.3592883     Document Type: Article

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