Extremely low recombination velocity on crystalline silicon surfaces realized by low-temperature impurity doping in Cat-CVD technology

Thin Solid Films

Volumn 519, Issue 14, 2011, Pages 4466-4468

  Hayakawa, Taro ^a   Miyamoto, Motoharu ^a   Koyama, Koichi ^a   Ohdaira, Keisuke ^a   Matsumura, Hideki ^a  

^a JAPAN ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY   (Japan)

Author keywords

Cat CVD; Hot wire CVD; Impurity doping; Low temperature; Phosphorus; Solar cells; Surface recombination velocity

Indexed keywords

CAT-CVD; HOT WIRE CVD; IMPURITY DOPING; LOW TEMPERATURES; SURFACE RECOMBINATION VELOCITY;

CHEMICAL VAPOR DEPOSITION; CRYSTALLINE MATERIALS; HALL EFFECT; PHOSPHORUS; PHOSPHORUS COMPOUNDS; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR DOPING; SILICON;

AMORPHOUS SILICON;

EID: 79958801885     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2011.01.301     Document Type: Conference Paper

References (4)

1. M. Taguchi, Y. Tsunomura, H. Inoue, S. Taira, and T. Nakashima Proc. of 24th European Photovoltaic Solar Energy Conference, Hamburg, Germany September 21-25, 2009 1690
2. K. Ohdaira, M. Miyamoto, K. Koyama, H. Matsumura, Proc. of 35th Photovoltaic Specialists Conference, Hawai'i, U.S.A., (in press).
3. H. Matsumura, and H. Tachibana Appl. Phys. Lett. 47 1985 833
4. J.I. Pankove, and N.M. Johnson Hydrogen in Semiconductors 1991 Academic Press