Microstructure and electronic properties of microcrystalline silicon carbide thin films prepared by hot-wire CVD

Thin Solid Films

Volumn 519, Issue 14, 2011, Pages 4511-4515

  Chen, T ^a   Kohler F ^a   Heidt, A ^a   Huang, Y ^a,b   Finger, F ^a   Carius, R ^a  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

^b Baoding Tianwei Solarfilms Co Ltd   (China)

Author keywords

Hot Wire CVD; Microcrystalline; Microstructure; Silicon carbide; Thin film

Indexed keywords

CRYSTALLINE PHASE; CRYSTALLINE VOLUME FRACTION; EXPERIMENTAL METHODS; HOT WIRE CHEMICAL VAPOR DEPOSITION; HOT WIRE CVD; LOCAL BONDING; LOW SUBSTRATE TEMPERATURE; MICRO-STRUCTURAL; MICROCRYSTALLINE; TRANSPORT MEASUREMENTS; X-RAY DIFFRACTION DATA;

CHEMICAL VAPOR DEPOSITION; ELECTRONIC PROPERTIES; FILM PREPARATION; MICROCRYSTALLINE SILICON; MICROSTRUCTURE; RAMAN SPECTROSCOPY; SILICON CARBIDE; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; WIRE; X RAY DIFFRACTION;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 79958788913     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2011.01.336     Document Type: Conference Paper

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