Characterization of ion/electron beam induced deposition of electrical contacts at the sub-μm scale

Microelectronic Engineering

Volumn 88, Issue 7, 2011, Pages 1569-1572

  Brunel, D ^a   Troadec, D ^a   Hourlier, D ^a   Deresmes, D ^a   Zdrojek, M ^b   Melin T ^a  

^a INSTITUT D ELECTRONIQUE   (France)

^b WARSAW UNIVERSITY OF TECHNOLOGY   (Poland)

Author keywords

Carbon nanotube; Electron beam induced deposition; FIB; Four probe measurements; Ion beam induced deposition; Transport measurements

Indexed keywords

ELECTRON BEAM INDUCED DEPOSITION; FIB; FOUR-PROBE MEASUREMENT; ION BEAM INDUCED DEPOSITION; TRANSPORT MEASUREMENTS;

ATOMIC FORCE MICROSCOPY; ELECTRON BEAMS; MULTIWALLED CARBON NANOTUBES (MWCN); PLATINUM; PROBES;

ELECTRIC CONTACTS;

EID: 79958071003     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2011.03.011     Document Type: Article

References (17)

1. S. Iijima Nature 354 1991 56 58
2. A.M. Morales, and C.M. Lieber Science 279 1998 208 211
3. P. Avouris, Z. Chen, and V. Perebeinos Nat. Nanotechnol. 2 2007 605 615
4. I. Heller, A.M. Janssens, J. Mannik, E.D. Minot, S.G. Lemay, and C. Dekker Nano Lett. 8 2008 591
5. J.N. Tey, P.M. Wijaya, Z. Wang, W.H. Goh, A. Palaniappan, S. Mhaisalkar, I. Rodriguez, S. Dunham, and J.A. Rogers Appl. Phys. Lett. 94 2009 013107
6. Y.Y. Wei, and G. Eres Phys. Lett. 76 2000 3759 3761
7. Y.Z. Long, J.L. Duvail, M.M. Li, C. Gu, Z. Liu, and S.P. Ringer Nanoscale Res. Lett. 5 2010 237 242
8. H. Guo, D. Martrou, T. Zambelli, E. Dujardin, and S. Gauthier Rev. Sci. Instrum. 79 2008 103904
9. G. Chen, E.M. Gallo, J. Burger, B. Nabet, A. Cola, P. Prete, N. Lovergine, and J.E. Spanier Appl. Phys. Lett. 96 2010 223107
10. V. Gopal, V.R. Radmilovic, C. Daraio, S. Jin, and E.A. Yang Stach Nano Lett. 4 2004 2059 2063
11. C.Y. Nam, D. Tham, and J.E. Fischer Nano Lett. 5 2005 2029
12. R.M. Langford, T.X. Wang, and D. Ozkaya Microelectron Eng. 84 2007 784 788
13. V. Gopal, E.A. Stach, V.R. Radmilovic, and I.A. Mowat Appl. Phys. Lett. 85 2004 49
14. A.D. Franklin, and Z. Chen Nat. Nanotechnol. 5 2010 858 862
15. D. Brunel, D. Deresmes, and T. Mélin The surface voltage drop across the set of electrodes is less than 3V, due to side-capacitance effects in KFM measurements Appl. Phys. Lett. 94 2009 223508
16. KFM experiments are not available for EBID contacted nanotubes due to low voltage drops along the device as a result of the EBID lead high resistance. c-AFM experiments would similarly provide local currents 4 to 6 orders of magnitude lower than for IBID electrodes (see Fig. 1), beyond detection limits.
17. R. Martel, T. Schmidt, H.R. Shea, T. Hertel, and P. Avouris Appl. Phys. Lett. 73 1998 2447