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Microelectronic Engineering

Volumn 88, Issue 7, 2011, Pages 1529-1532

Metal-insulator-metal capacitors with MOCVD grown Ce-Al-O as a dielectric

(8) Lukosius, M a Baristiran Kaynak, C a Abrutis, A b Skapas, M b Kubilius, V b Zauner, A c Ruhl, G d Wenger, Ch a

a IHP (Germany)

b VILNIUS UNIVERSITY (Lithuania)

c AIR LIQUIDE (France)

d INFINEON TECHNOLOGIES AG (Germany)

Author keywords

Ce Al O; Dielectric; MIM; MOCVD

Indexed keywords

AS-DEPOSITED FILMS; BOTTOM ELECTRODES; CE-AL-O; DIELECTRIC; E BEAM EVAPORATION; K-VALUES; METAL INSULATOR METALS; METAL-INSULATOR-METAL CAPACITORS; MIM; MIM CAPACITORS; POST DEPOSITION ANNEALING; PULSED INJECTION; RUTILE TIO; XRD ANALYSIS;

ALUMINUM; ALUMINUM COATINGS; AMORPHOUS FILMS; DEPOSITION; ELECTRIC PROPERTIES; ELECTROLYTIC CAPACITORS; METAL INSULATOR BOUNDARIES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; METALS; MIM DEVICES; ORGANIC CHEMICALS; ORGANOMETALLICS; OXIDE MINERALS; SEMICONDUCTOR INSULATOR BOUNDARIES; STOICHIOMETRY; TITANIUM DIOXIDE; TITANIUM NITRIDE;

CERIUM;

EID: 79958023985 PISSN: 01679317 EISSN: None Source Type: Journal
DOI: 10.1016/j.mee.2011.03.044 Document Type: Conference Paper

Times cited : (2)

References (10)

1
- 84890877123
- Semiconductor Industry Association, Palo Alto update
- RF and Analog/Mixed-Signal Technologies for Wireless Communications, International Roadmap for Semiconductors (Semiconductor Industry Association, Palo Alto, 2009 update).
- (2009) RF and Analog/Mixed-Signal Technologies for Wireless Communications, International Roadmap for Semiconductors

2
- 0034454864
- M. Armacost, A. Augustin, P. Felsner, Y. Feng, G. Friese, J. Heidenreich, G. Hueckel, O. Prigge, and K. Stein IEDM Tech. Dig. 2000 157 160
- (2000) IEDM Tech. Dig. , pp. 157-160
- Armacost, M.¹ Augustin, A.² Felsner, P.³ Feng, Y.⁴ Friese, G.⁵ Heidenreich, J.⁶ Hueckel, G.⁷ Prigge, O.⁸ Stein, K.⁹

3
- 0036540911
- S. Van huylenbroeck, S. Decoutere, R. Venegas, S. Jenei, and G. Winderickx IEEE Electron. Dev. Lett. 23 2002 191 193
- (2002) IEEE Electron. Dev. Lett. , vol.23 , pp. 191-193
- Van Huylenbroeck, S.¹ Decoutere, S.² Venegas, R.³ Jenei, S.⁴ Winderickx, G.⁵

4
- 0036313134
- D. Coolbaugh, E. Eshun, R. Groves, D. Harame, J. Johnson, M. Hammad, Z. He, V. Ramachandra, K. Stein, S. Onge, S. Subbanna, D. Wang, R. Wolant, X. Wang, and K. Watson IEEE Radio Integrated Circuits 2002 341
- (2002) IEEE Radio Integrated Circuits , pp. 341
- Coolbaugh, D.¹ Eshun, E.² Groves, R.³ Harame, D.⁴ Johnson, J.⁵ Hammad, M.⁶ He, Z.⁷ Ramachandra, V.⁸ Stein, K.⁹ Onge, S.¹⁰ Subbanna, S.¹¹ Wang, D.¹² Wolant, R.¹³ Wang, X.¹⁴ Watson, K.¹⁵

5
- 0035339020
- J. Babcock, S. Balster, A. Pinto, C. Dirnecker, P. Steinmann, R. Jumpertz, and B. El-Kareh IEEE Electron. Dev. Lett. 22 2001 230 232
- (2001) IEEE Electron. Dev. Lett. , vol.22 , pp. 230-232
- Babcock, J.¹ Balster, S.² Pinto, A.³ Dirnecker, C.⁴ Steinmann, P.⁵ Jumpertz, R.⁶ El-Kareh, B.⁷

6
- 17444406203
- I.A. Shelykh, and B.T. Melekh Phys. Solid State 45 2003 238 241
- (2003) Phys. Solid State , vol.45 , pp. 238-241
- Shelykh, I.A.¹ Melekh, B.T.²

7
- 74049137921
- R. Sohal, G. Lupina, O. Seifarth, P. Zaumseil, Ch. Walzcyk, and T. Schoeder Surf. Sci. 604 2010 276 282
- (2010) Surf. Sci. , vol.604 , pp. 276-282
- Sohal, R.¹ Lupina, G.² Seifarth, O.³ Zaumseil, P.⁴ Walzcyk, C.⁵ Schoeder, T.⁶

8
- 0035872897
- G.D. Wilk, R.M. Wallace, and J.M. Anthony J. Appl. Phys. 89 2001 5243 5275
- (2001) J. Appl. Phys. , vol.89 , pp. 5243-5275
- Wilk, G.D.¹ Wallace, R.M.² Anthony, J.M.³

9
- 70450200549
- C.H. Cheng, H.H. Hsu, W.B. Chen, A. Chin, and F.S. Yeh Electrochem. Solid State Lett. 13 2010 H16 H19
- (2010) Electrochem. Solid State Lett. , vol.13
- Cheng, C.H.¹ Hsu, H.H.² Chen, W.B.³ Chin, A.⁴ Yeh, F.S.⁵

10
- 77956985716
- F.C. Chiu, and C.M. Lai J. Phys. D: Appl. Phys. 43 2010 075104
- (2010) J. Phys. D: Appl. Phys. , vol.43 , pp. 075104
- Chiu, F.C.¹ Lai, C.M.²

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