Top-seeded solution growth, morphology, and properties of a polar crystal Cs2TeMo3O12

Crystal Growth and Design

Volumn 11, Issue 5, 2011, Pages 1863-1868

  Zhang, Junjie ^a   Tao, Xutang ^a   Sun, Youxuan ^a   Zhang, Zhonghan ^a   Zhang, Chengqian ^a   Gao, Zeliang ^a   Xia, Haibing ^a   Xia, Shengqing ^a  

^a SHANDONG UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

GROWN FROM SOLUTIONS; HEXAGONAL TUNGSTEN OXIDE; HIGH CONCENTRATION; HIGH RESOLUTION X RAY DIFFRACTION; LOW CONCENTRATIONS; OPTICAL MEASUREMENT; POLAR CRYSTALS; POLARIZATION MEASUREMENTS; POWDER X RAY DIFFRACTION; PREDICTED GROWTH; ROCKING CURVES; SPACE GROUPS; THERMAL ANALYSIS; TOP SEEDED SOLUTION GROWTH; TRANSMISSION WINDOW;

CESIUM; DIFFRACTION; MOLYBDENUM OXIDE; MORPHOLOGY; OPTICAL DATA PROCESSING; THERMOANALYSIS; TUNGSTEN; TUNGSTEN COMPOUNDS; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS;

SINGLE CRYSTALS;

EID: 79957959778     PISSN: 15287483     EISSN: 15287505     Source Type: Journal    
DOI: 10.1021/cg200050g     Document Type: Article

References (44)

1. (a) Authier, A. International Tables for Crystallography, Vol. D: Physical Properties of Crystals; Kluwer Academic Publishers: Dordrecht, The Netherlands, 2003.
2. (b) Nye, J. F. Physical Properties of Crystals; Oxford University Press: New York, 1985.
3. (c) Marder, S. R.; Sohn, J. E.; Stucky, G. D. Materials for Nonlinear Optics: Chemical Perspectives; American Chemical Society: Washington, DC, 1991.
4. (d) Waser, R.; Böttger, U.; Tiedke, S. Polar Oxides: Properties, Characterization, and Imaging; Wiley-VCH Verlag GmbH & Co. KGaA: Weinheim, 2005.
5. Brammer, L. Chem. Soc. Rev. 2004, 33, 476-489.
6. (a) Yeon, J.; Kim, S.-H.; Halasyamani, P. S. Inorg. Chem. 2010, 49, 6986-6993.
7. (b) Yang, T.; Sun, J. L.; Yeon, J.; Halasyamani, P. S.; Huang, S. L.; Hemberger, J.; Greenblatt, M. Chem. Mater. 2010, 22, 4814-4820.
8. (c) Chang, H. Y.; Kim, S. W.; Halasyamani, P. S. Chem. Mater. 2010, 22, 3241-3250.
9. (d) Kim, S. H.; Yeon, J.; Halasyamani, P. S. Chem. Mater. 2009, 21, 5335-5342.
10. (e) Chang, H.-Y.; Kim, S.-H.; Ok, K. M.; Halasyamani, P. S. J. Am. Chem. Soc. 2009, 131, 6865-6873.
11. (f) Ra, H. S.; Ok, K. M.; Halasyamani, P. S. J. Am. Chem. Soc. 2003, 125, 7764-7765.
12. (g) Goodey, J.; Broussard, J.; Halasyamani, P. S. Chem. Mater. 2002, 14, 3174-3180.
13. (a) Sun, C. F.; Hu, C. L.; Xu, X. A.; Mao, J. G. Inorg. Chem. 2010, 49, 9581-9589.
14. (b) Kong, F.; Xu, X.; Mao, J.-G. Inorg. Chem. 2010, 49, 11573-11580.
15. (c) Zhou, Y.; Hu, C. L.; Hu, T.; Kong, F.; Mao, J. G. Dalton Trans. 2009, 5747-5754.
16. (d) Zhang, S.-Y.; Jiang, H.-L.; Sun, C.-F.; Mao, J.-G. Inorg. Chem. 2009, 48, 11809-11820.
17. (e) Sun, C. F.; Hu, C. L.; Xu, X.; Ling, J. B.; Hu, T.; Kong, F.; Long, X. F.; Mao, J. G. J. Am. Chem. Soc. 2009, 131, 9486-9487.
18. (f) Kong, F.; Huang, S.-P.; Sun, Z.-M.; Mao, J.-G.; Cheng, W.-D. J. Am. Chem. Soc. 2006, 128, 7750-7751.
19. (g) Kong, F.; Jiang, H.-L.; Hu, T.; Mao, J.-G. Inorg. Chem. 2008, 47 10611-10617.
20. Inaguma, Y.; Yoshida, M.; Katsumata, T. J. Am. Chem. Soc. 2008, 130, 6704-6705.
21. (a) Chang, K. B.; Hubbard, D. J.; Zeller, M.; Schrier, J.; Norquist, A. J. Inorg. Chem. 2010, 49, 5167-5172.
22. (b) Veltman, T. R.; Stover, A. K.; Sarjeant, A. N.; Ok, K. M.; Halasyamani, P. S.; Norquist, A. J. Inorg. Chem. 2006, 45, 5529-5537.
23. (c) Muller, E. A.; Cannon, R. J.; Sarjeant, A. N.; Ok, K. M.; Halasyamani, P. S.; Norquist, A. J. Cryst. Growth Des. 2005, 5, 1913-1917.
24. (a) Ok, K. M.; Halasyamani, P. S.; Casanova, D.; Llunell, M.; Alemany, P.; Alvarez, S. Chem. Mater. 2006, 18, 3176-3183.
25. (b) Halasyamani, P. S. Chem. Mater. 2004, 16, 3586-3592.
26. (c) Bersuker, I. B. Chem. Rev. 2001, 101, 1067-1114.
27. (d) Halasyamani, P. S.; Poeppelmeier, K. R. Chem. Mater. 1998, 10, 2753-2769.
28. Zhang, W.-L.; Cheng, W.-D.; Zhang, H.; Geng, L.; Lin, C.-S.; He, Z.-Z. J. Am. Chem. Soc. 2010, 132, 1508-1509.
29. Fan, X. Y.; Pan, S. L.; Hou, X. L.; Tian, X. L.; Han, J.; Haag, J.; Poeppelmeier, K. R. Cryst. Growth Des. 2010, 10, 252-256.
30. Balraj, V.; Vidyasagar, K. Inorg. Chem. 1998, 37, 4764-4774.
31. (a) Zhang, W.; Tao, X.; Zhang, C.; Zhang, H.; Jiang, M. Cryst. Growth Des. 2009, 9, 2633-2636.
32. (b) Gao, Z. L.; Yin, X.; Zhang, W. G.; Wang, S. P.; Jiang, M. H.; Tao, X. T. Appl. Phys. Lett. 2009, 95, 151107.
33. (c) Zhang, W. G.; Tao, X. T.; Zhang, C. Q.; Gao, Z. L.; Zhang, Y. Z.; Yu, W. T.; Cheng, X. F.; Liu, X. S.; Jiang, M. H. Cryst. Growth Des. 2008, 8, 304-307.
34. (d) Gao, Z.; Tao, X.; Yin, X.; Zhang, W.; Jiang, M. Appl. Phys. Lett. 2008, 93, 252906.
35. Zhang, W.; Li, F.; Kim, S.-H.; Halasyamani, P. S. Cryst. Growth Des. 2010, 10, 4091-4095.
36. Bruker APEX2; Bruker Analytical X-ray Instruments, Inc.: Madison, WI, 2005.
37. Sheldrick, G. M. SHELXTL, version 6.12; Bruker Analytical X-ray Instruments, Inc.: Madison, WI, 2001.
38. Spek, A. L. J. Appl. Crystallogr. 2003, 36, 7-13.
39. Petrini, G.; Bart, J. C. J. Z. Anorg. Allg. Chem. 1981, 474, 229-232.
40. Accelrys MS Modeling Getting Started; Accelrys Software Inc.: San Diego, 2006.
41. (a) Bravais, A. Etudes Crystallographiques; Academie des Sciences: Paris, 1913.
42. (b) Donnay, J. D. H.; Harker, D. Am. Mineral. 1937, 22, 463.
43. (a) Brown, I. D.; Altermatt, D. Acta Crystallogr B 1985, 41, 244-247.
44. (b) Brese, N. E.; O'Keeffe, M. Acta Crystallogr. B 1991, 47, 192-197.