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Volumn 115, Issue 21, 2011, Pages 10806-10816

Characterizing the ultrafast charge carrier trapping dynamics in single ZnO rods using two-photon emission microscopy

Author keywords

[No Author keywords available]

Indexed keywords

AS-GROWN; BAND EDGE; BAND GAPS; BLUE SHIFT; CHARGE CARRIER TRAPPING; CONDUCTION BAND ELECTRONS; DEFECT EMISSION; DONOR-ACCEPTOR PAIR TRANSITIONS; DYNAMIC RED-SHIFT; EMISSION BANDS; EXCITED-STATE DYNAMICS; EXCITON-BINDING ENERGY; PHOTOGENERATED HOLES; PHOTOLUMINESCENCE IMAGES; PHOTOLUMINESCENCE SPECTRUM; PHOTONIC APPLICATION; RECOMBINATION RATE; RED SHIFT; RICH STRUCTURE; SECOND-ORDER NONLINEAR SUSCEPTIBILITY; SPATIAL PROXIMITY; TIME-DEPENDENT; TIME-RESOLVED; TIME-RESOLVED EMISSION SPECTRA; TRANSITION ENERGY; TRAP DENSITY; TWO-PHOTON EMISSION; ULTRA-FAST; WIDE BAND GAP; ZNO ROD;

EID: 79957809545     PISSN: 19327447     EISSN: 19327455     Source Type: Journal    
DOI: 10.1021/jp1118426     Document Type: Article
Times cited : (20)

References (57)
  • 26
    • 84892264893 scopus 로고    scopus 로고
    • 3 rd ed.; Springer-Verlag: Berlin, Germany
    • Klingshirn, C. Semiconductor Optics, 3 rd ed.; Springer-Verlag: Berlin, Germany, 2007.
    • (2007) Semiconductor Optics
    • Klingshirn, C.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.