SCOPUS 정보 검색 플랫폼

Volumn 98, Issue 18, 2011, Pages

Conversion from unipolar to bipolar resistance switching by inserting Ta2 O5layer in Pt/TaOx/Pt cells

Author keywords

[No Author keywords available]

Indexed keywords

CIRCUIT BREAKER; COMPLIANCE CURRENT; LAYER THICKNESS; LOW-RESISTANCE STATE; NETWORK MODELS; RESISTANCE SWITCHING;

PLATINUM; TANTALUM OXIDES;

SWITCHING;

EID: 79957510490 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3587809 Document Type: Article

Times cited : (35)

References (13)

1
- 43349101629
- 0935-9648, 10.1002/adma.200702024
- S. C. Chae, J. S. Lee, S. Kim, S. B. Lee, S. H. Chang, C. Liu, B. Kahng, H. Shin, D. -W. Kim, C. U. Jung, S. Seo, M. -J. Lee, and T. W. Noh, Adv. Mater. (Weinheim, Ger.) 0935-9648 20, 1154 (2008). 10.1002/adma.200702024
- (2008) Adv. Mater. (Weinheim, Ger.) , vol.20 , pp. 1154
- Chae, S.C.¹ Lee, J.S.² Kim, S.³ Lee, S.B.⁴ Chang, S.H.⁵ Liu, C.⁶ Kahng, B.⁷ Shin, H.⁸ Kim, D.-W.⁹ Jung, C.U.¹⁰ Seo, S.¹¹ Lee, M.-J.¹² Noh, T.W.¹³

2
- 78650349637
- 0003-6951, 10.1063/1.3524521
- J. J. Yang, M. -X. Zhang, J. P. Strachan, F. Miao, M. D. Pickett, R. D. Kelley, G. Medeiros-Ribeiro, and R. S. Williams, Appl. Phys. Lett. 0003-6951 97, 232102 (2010). 10.1063/1.3524521
- (2010) Appl. Phys. Lett. , vol.97 , pp. 232102
- Yang, J.J.¹ Zhang, M.-X.² Strachan, J.P.³ Miao, F.⁴ Pickett, M.D.⁵ Kelley, R.D.⁶ Medeiros-Ribeiro, G.⁷ Williams, R.S.⁸

3
- 67650102619
- 0935-9648, 10.1002/adma.200900375
- R. Waser, R. Dittmann, G. Staikov, and K. Szot, Adv. Mater. (Weinheim, Ger.) 0935-9648 21, 2632 (2009). 10.1002/adma.200900375
- (2009) Adv. Mater. (Weinheim, Ger.) , vol.21 , pp. 2632
- Waser, R.¹ Dittmann, R.² Staikov, G.³ Szot, K.⁴

5
- 76649133422
- 1748-3387, 10.1038/nnano.2009.456
- D. -H. Kwon, K. M. Kim, J. H. Jang, J. M. Jeon, M. H. Lee, G. H. Kim, X. -S. Li, G. -S. Park, B. Lee, S. Han, M. Kim, and C. S. Hwang, Nat. Nanotechnol. 1748-3387 5, 148 (2010). 10.1038/nnano.2009.456
- (2010) Nat. Nanotechnol. , vol.5 , pp. 148
- Kwon, D.-H.¹ Kim, K.M.² Jang, J.H.³ Jeon, J.M.⁴ Lee, M.H.⁵ Kim, G.H.⁶ Li, X.-S.⁷ Park, G.-S.⁸ Lee, B.⁹ Han, S.¹⁰ Kim, M.¹¹ Hwang, C.S.¹²

6
- 77950852717
- 0028-0836, 10.1038/nature08940
- J. Borghetti, G. S. Snider, P. J. Kuekes, J. J. Yang, D. R. Stewart, and R. S. Williams, Nature (London) 0028-0836 464, 873 (2010). 10.1038/nature08940
- (2010) Nature (London) , vol.464 , pp. 873
- Borghetti, J.¹ Snider, G.S.² Kuekes, P.J.³ Yang, J.J.⁴ Stewart, D.R.⁵ Williams, R.S.⁶

7
- 78149260996
- 0556-2805, 10.1103/PhysRevB.82.155321
- J. H. Hur, M. -J. Lee, C. B. Lee, Y. -B. Kim, and C. -J. Kim, Phys. Rev. B 0556-2805 82, 155321 (2010). 10.1103/PhysRevB.82.155321
- (2010) Phys. Rev. B , vol.82 , pp. 155321
- Hur, J.H.¹ Lee, M.-J.² Lee, C.B.³ Kim, Y.-B.⁴ Kim, C.-J.⁵

8
- 0004024848
- (Clarendon, Oxford).
- J. J. O'Dwyer, The Theory of Electrical Conduction and Breakdown in Solid Dielectrics (Clarendon, Oxford, 1973).
- (1973) The Theory of Electrical Conduction and Breakdown in Solid Dielectrics
- O'Dwyer, J.J.¹

9
- 48249129194
- 0003-6951, 10.1063/1.2959065
- K. Kinoshita, K. Tsunoda, Y. Sato, H. Noshiro, S. Yagaki, M. Aoki, and Y. Sugiyama, Appl. Phys. Lett. 0003-6951 93, 033506 (2008). 10.1063/1.2959065
- (2008) Appl. Phys. Lett. , vol.93 , pp. 033506
- Kinoshita, K.¹ Tsunoda, K.² Sato, Y.³ Noshiro, H.⁴ Yagaki, S.⁵ Aoki, M.⁶ Sugiyama, Y.⁷

10
- 78149290994
- 0031-9007, 10.1103/PhysRevLett.105.205701
- J. S. Lee, S. B. Lee, S. H. Chang, L. G. Gao, B. S. Kang, M. -J. Lee, C. J. Kim, T. W. Noh, and B. Kahng, Phys. Rev. Lett. 0031-9007 105, 205701 (2010). 10.1103/PhysRevLett.105.205701
- (2010) Phys. Rev. Lett. , vol.105 , pp. 205701
- Lee, J.S.¹ Lee, S.B.² Chang, S.H.³ Gao, L.G.⁴ Kang, B.S.⁵ Lee, M.-J.⁶ Kim, C.J.⁷ Noh, T.W.⁸ Kahng, B.⁹

11
- 70349653534
- 0003-6951, 10.1063/1.3237167
- S. B. Lee, S. Park, J. S. Lee, S. C. Chae, S. H. Chang, M. H. Jung, Y. Jo, B. Kahng, B. S. Kang, M. -J. Lee, and T. W. Noh, Appl. Phys. Lett. 0003-6951 95, 122112 (2009). 10.1063/1.3237167
- (2009) Appl. Phys. Lett. , vol.95 , pp. 122112
- Lee, S.B.¹ Park, S.² Lee, J.S.³ Chae, S.C.⁴ Chang, S.H.⁵ Jung, M.H.⁶ Jo, Y.⁷ Kahng, B.⁸ Kang, B.S.⁹ Lee, M.-J.¹⁰ Noh, T.W.¹¹

12
- 79251557831
- 0003-6951, 10.1063/1.3543776
- S. B. Lee, J. S. Lee, S. H. Chang, H. K. Yoo, B. S. Kang, B. Kahng, M. -J. Lee, C. J. Kim, and T. W. Noh, Appl. Phys. Lett. 0003-6951 98, 033502 (2011). 10.1063/1.3543776
- (2011) Appl. Phys. Lett. , vol.98 , pp. 033502
- Lee, S.B.¹ Lee, J.S.² Chang, S.H.³ Yoo, H.K.⁴ Kang, B.S.⁵ Kahng, B.⁶ Lee, M.-J.⁷ Kim, C.J.⁸ Noh, T.W.⁹

13
- 67649143212
- 0957-4484, 10.1088/0957-4484/20/21/215201
- J. J. Yang, F. Miao, M. D. Pickett, D. A. A. Ohlberg, D. R. Stewart, C. N. Lau, and R. S. Williams, Nanotechnology 0957-4484 20, 215201 (2009). 10.1088/0957-4484/20/21/215201
- (2009) Nanotechnology , vol.20 , pp. 215201
- Yang, J.J.¹ Miao, F.² Pickett, M.D.³ Ohlberg, D.A.A.⁴ Stewart, D.R.⁵ Lau, C.N.⁶ Williams, R.S.⁷

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.