Crack Tip Opening Displacement in atomistic modeling of fracture of silicon

Computational Materials Science

Volumn 50, Issue 9, 2011, Pages 2621-2627

  Thaulow, Christian ^a   Schieffer, Stella V ^b   Vatne, Inga R ^a   Sen, Dipanjan ^b   Østby, Erling ^c  

^a NORWEGIAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Norway)

^b Massachusetts Institute of Technology   (United States)

^c SINTEF MATERIALS AND CHEMISTRY   (Norway)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMISTIC APPROACH; ATOMISTIC MODELING; BOND-BREAKING; CRACK TIP OPENING DISPLACEMENT; CRYSTALLOGRAPHIC ORIENTATIONS; DUCTILE BEHAVIOR; FAILURE MECHANISM; FIRST-PRINCIPLES; FRACTURE PLANE; PHYSICS-BASED; REACTIVE FORCE FIELD; SINGLE CRYSTAL SILICON; THREE TEMPERATURE;

CONTINUUM MECHANICS; CRACK TIPS; CRACKS; DISLOCATIONS (CRYSTALS); DUCTILE FRACTURE; ELASTICITY; FRACTURE TOUGHNESS; SILICON WAFERS; SINGLE CRYSTALS;

BRITTLE FRACTURE;

EID: 79957488741     PISSN: 09270256     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.commatsci.2011.04.004     Document Type: Article

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