Electronic structure of GaInN semiconductors investigated by x-ray absorption spectroscopy

Applied Physics Letters

Volumn 98, Issue 18, 2011, Pages

  Guo, Q X ^a   Senda, H ^a   Saito, K ^a   Tanaka, T ^a   Nishio, M ^a   Ding, J ^b   Fan, T X ^b   Zhang, D ^b   Wang, X Q ^c   Liu, S T ^c   Shen, B ^c   Ohtani, R ^d  

^a SAGA UNIVERSITY   (Japan)

^b SHANGHAI JIAO TONG UNIVERSITY   (China)

^c PEKING UNIVERSITY   (China)

^d Kyushu Synchrotron Light Research Center ^*  (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

MULTIPLE-SCATTERING THEORY; NON DESTRUCTIVE; REAL-SPACE; SELF-CONSISTENT FIELD; SPECTRAL FEATURE; THEORETICAL CALCULATIONS; X-RAY ABSORPTION NEAR-EDGE FINE STRUCTURES; XANES; XANES SPECTRA;

ABSORPTION; DENSITY FUNCTIONAL THEORY; ELECTRONIC PROPERTIES; ELECTRONIC STRUCTURE; ISOMERS; SEMICONDUCTING ALUMINUM COMPOUNDS; X RAY ABSORPTION;

ABSORPTION SPECTROSCOPY;

EID: 79957473345     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3583461     Document Type: Article

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