Electrochemical removal of segregated silicon dioxide impurities from yttria stabilized zirconia surfaces at elevated temperatures

Solid State Ionics

Volumn 190, Issue 1, 2011, Pages 60-66

  Andersen, Thomas ^a   Hansen, Karin Vels ^a   Mogensen, Mogens ^a   Chorkendorff, Ib ^a  

^a TECHNICAL UNIVERSITY OF DENMARK   (Denmark)

Author keywords

Cleaning; Electrochemical reduction; Silicon dioxide; Yttria stabilized zirconia

Indexed keywords

CRYSTAL SURFACES; ELECTROCHEMICAL REDUCTION; ELECTROCHEMICAL REDUCTIONS; ELECTROCHEMICAL REMOVAL; ELEVATED TEMPERATURE; GOLD FOILS; IN-VACUUM; LOW OXYGEN; NO OXIDATION; SILICON DIOXIDE; TEMPERATURE RANGE; VAPOR PARTIAL PRESSURE; VOLATILE SILICON MONOXIDE; XPS ANALYSIS;

ANNEALING; ATMOSPHERIC TEMPERATURE; CRYSTAL IMPURITIES; ELECTROLYTIC REDUCTION; OXYGEN; PARTIAL PRESSURE; PHOTOELECTRON SPECTROSCOPY; REMOVAL; SILICA; SINGLE CRYSTALS; VACUUM; WATER VAPOR; X RAY PHOTOELECTRON SPECTROSCOPY; YTTRIUM ALLOYS; ZIRCONIA;

YTTRIA STABILIZED ZIRCONIA;

EID: 79956084515     PISSN: 01672738     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ssi.2011.02.024     Document Type: Article

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