Effects of carbon codoping on lattice locations of erbium in silicon

Applied Physics Letters

Volumn 81, Issue 15, 2002, Pages 2734-2736

  Huang, M B ^a   Ren, X T ^a  

^a STATE UNIVERSITY OF NEW YORK   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SI; C-DOPED; CARBON ATOMS; CARBON CONCENTRATIONS; CARBON IONS; CO-DOPING; ER LUMINESCENCE; INTERSTITIAL SITES; LATTICE LOCATIONS; SI(1 0 0); SOLID PHASE EPITAXIAL GROWTH;

AMORPHOUS CARBON; AMORPHOUS SILICON; ATOMS; EPITAXIAL GROWTH; ERBIUM; ION IMPLANTATION; IONS; SILICON; SILICON WAFERS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 79956056528     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1510960     Document Type: Article

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