Strong enhancement of THz radiation intensity from semi-insulating GaAs surfaces at high temperatures

Applied Physics Letters

Volumn 81, Issue 8, 2002, Pages 1462-1464

  Nakajima, M ^a   Takahashi, M ^a   Hangyo, M ^a  

^a OSAKA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ENHANCEMENT MECHANISM; HIGH TEMPERATURE; RADIATION POWER; ROOM TEMPERATURE; SEMI-INSULATING GAAS; STRONG ENHANCEMENT; SURFACE ELECTRIC FIELDS; TEMPERATURE DEPENDENCE; THZ RADIATION;

ELECTRIC FIELDS; GALLIUM ARSENIDE; PULSE GENERATORS; SEMICONDUCTING GALLIUM; TEMPERATURE DISTRIBUTION;

TERAHERTZ WAVES;

EID: 79956056497     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1499755     Document Type: Article

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