Experimental evidence of asymmetric carrier transport in InGaAs quantum wells and wires grown on tilted InP substrates

Applied Physics Letters

Volumn 81, Issue 13, 2002, Pages 2460-2462

  Monte, A F G ^a   Da Silva, S W ^a   Cruz, J M R ^a   Morais, P C ^a   Chaves, A S ^b  

^a UNIVERSITY OF BRASILIA   (Brazil)

^b FEDERAL UNIVERSITY OF MINAS GERAIS   (Brazil)

Author keywords

[No Author keywords available]

Indexed keywords

ASYMMETRIC DIFFUSION; CARRIER DIFFUSIONS; ELECTRON-HOLE TRANSPORT; EXPERIMENTAL DATA; EXPERIMENTAL EVIDENCE; INGAAS QUANTUM WELLS; INP SUBSTRATES; INTERFACE MORPHOLOGIES; NON-FICKIAN DIFFUSION; PHOTOLUMINESCENCE INTENSITIES; QUANTUM STRUCTURE; SAMPLE SURFACE;

CARRIER CONCENTRATION; DIFFUSION; GALLIUM; GALLIUM ALLOYS; INTERFACES (MATERIALS); LANDFORMS; PARTIAL DIFFERENTIAL EQUATIONS; SEMICONDUCTOR QUANTUM WELLS;

QUANTUM CHEMISTRY;

EID: 79956051696     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1507619     Document Type: Article

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